Die-Attach Technology for Wide Band Gap Semiconductor
نویسندگان
چکیده
منابع مشابه
Wide Band Gap Semiconductor Devices for Power Electronics
It is worldwide accepted today that a real breakthrough in the Power Electronics field may mainly come from the development and use of Wide Band Gap (WBG) semiconductor devices. WBG semiconductors such as SiC, GaN, and diamond show superior material properties, which allow operation at high-switching speed, high-voltage and high-temperature. These unique performances provide a qualitative chang...
متن کاملSelecting Die Attach Technology for High-Power Applications Page of
From a packaging perspective, there are a number of common requirements for all these highpower applications: they must handle high electrical currents, dissipate large amounts of heat, manage thermal expansion-induced stresses for high reliability, and this must all be accomplished at low cost. Cost, in this case, includes assembly as well as materials. ROHS regulations also add some new dimen...
متن کاملDie Attach for High Temperature Electronics Packaging
AuSi, patterned Au and off-eutectic Sn-Au-Sn die attach materials and processes have been investigated for SiC die attach for high temperature applications. AuSi shear test results after 3000 hours of aging at 325C in air showed only a slight decrease in shear strength when assembled on Mo:Mn/Pd/Au metallized AlN. However, when assembled on Mo:Mn/Ni/Au metallized AlN, the die shear strength dec...
متن کاملVertically aligned nanostructures based on Na-doped ZnO nanorods for wide band gap semiconductor memory applications.
Vertically aligned undoped ZnO nanotips, nanotubes and nanorods were synthesized on the top facets of Na-doped ZnO nanorods without catalytic assistance under different growth times in a chemical vapor deposition system. The growth mechanism is discussed. The Na-doped nanorods were grown on a ZnO seed layer on Si. The p-type conductivity of the Na-doped nanorods was studied by temperature-depen...
متن کاملAdvances in Wide-Band Gap Semiconductor Based Photocathode Devices for Low Light Level Applications
The basic requirement for a imaging low-light level system (one capable of single photon counting) is that the device has low dark current. Photocathode based devices have the advantage over solid state devices in this regard as the dark current is inherently low. A further requirement for UV detectors is the necessity to suppress the sensitivity in the red, and wide-band gap semi-conductors ll...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of The Surface Finishing Society of Japan
سال: 2018
ISSN: 0915-1869,1884-3409
DOI: 10.4139/sfj.69.94